Toshiba Semiconductor and Storage TK65G10N1,RQ

TK65G10N1-RQ Toshiba Semiconductor and Storage TK65G10N1,RQ
TK65G10N1,RQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 32.5A, 10V
title:
TK65G10N1,RQ
Vgs(th) (Max) @ Id:
4V @ 1mA
edacadModel:
TK65G10N1,RQ Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4815234
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5400 pF @ 50 V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Gate Charge (Qg) (Max) @ Vgs:
81 nC @ 10 V
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
65A (Ta)
Power Dissipation (Max):
156W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK65G10
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK65G10N1,RQ. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 4.5mohm @ 32.5a, 10v. The typical Vgs (th) (max) of the product is 4v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5400 pf @ 50 v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 81 nc @ 10 v. d2pak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 65a (ta). The product carries maximum power dissipation 156w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk65g10, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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