Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
180 nC
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Series:
DeepGate, STripFET
Channel Type:
N
Length:
15.8mm
Maximum Drain Source Resistance:
3.2 mΩ
Package Type:
H2PAK-2
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
120 A
Minimum Gate Threshold Voltage:
1V
Transistor Material:
Si
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 60A, 10V
title:
STH160N4LF6-2
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
REACH Status:
REACH Unaffected
edacadModel:
STH160N4LF6-2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/5244714
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
8130 pF @ 20 V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VI
Gate Charge (Qg) (Max) @ Vgs:
181 nC @ 10 V
Supplier Device Package:
H2PAK-2
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH160
ECCN:
EAR99
