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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK65E10N1,S1X. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 4.8mohm @ 32.5a, 10v. The maximum gate charge and given voltages include 81 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 192w (tc). The product's input capacitance at maximum includes 5400 pf @ 50 v. It has a long 52 weeks standard lead time. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 148a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk65e10, a base product number of the product. The product is designated with the ear99 code number.
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