Rohm Semiconductor RQ3G150GNTB

RQ3G150GNTB Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 40V 39A (Tc) 20W (Tc) Surface Mount 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
RQ3G150
Gate Charge (Qg) (Max) @ Vgs:
11.6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
7.2mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1450pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
8-HSMT (3.2x3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
39A (Tc)
Customer Reference:
Power Dissipation (Max):
20W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ3G150GNTB. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 40v 39a (tc) 20w (tc) surface mount 8-hsmt (3.2x3). The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: rq3g150. The maximum gate charge and given voltages include 11.6nc @ 4.5v. It has a maximum Rds On and voltage of 7.2mohm @ 15a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The rohm semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1450pf @ 20v. The product is available in surface mount configuration. 8-hsmt (3.2x3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 39a (tc). The product carries maximum power dissipation 20w (tc). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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RQ3G150GN ESD Data(Environmental Information)
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HSMT8-HF Constitution Material List(Environmental Information)
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HSMT8 TB Taping Spec(Datasheets)
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HSMT8 Part Marking(Other Related Documents)
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HSMT8 Inner Structure(Other Related Documents)

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