Toshiba Semiconductor and Storage SSM6P16FE(TE85L,F)

SSM6P16FE-TE85L-F- Toshiba Semiconductor and Storage SSM6P16FE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
RoHS Status:
RoHS Compliant
Rds On (Max) @ Id, Vgs:
8Ohm @ 10mA, 4V
FET Type:
P-Channel
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
20 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
11 pF @ 3 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ES6
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6P16
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P16FE(TE85L,F). It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. The product is rohs compliant. It has a maximum Rds On and voltage of 8ohm @ 10ma, 4v. It carries FET type p-channel. It is shipped in cut tape (ct) package . The product has a 20 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150mw (ta). The product's input capacitance at maximum includes 11 pf @ 3 v. The product is available in surface mount configuration. es6 is the supplier device package value. The continuous current drain at 25°C is 100ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6p16, a base product number of the product. The product is designated with the ear99 code number.

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