Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
MCPH3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.8 nC @ 4 V
Channel Type:
P
Length:
2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.83mm
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
430 mΩ
Base Part Number:
MCH3333
Detailed Description:
P-Channel 30V 2A (Ta) 900mW (Ta) Surface Mount SC-70FL/MCPH3
Input Capacitance (Ciss) (Max) @ Vds:
240pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
2.8nC @ 4V
Rds On (Max) @ Id, Vgs:
215mOhm @ 1A, 4V
Supplier Device Package:
SC-70FL/MCPH3
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-23-3 Flat Leads
Power Dissipation (Max):
900mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
