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This is manufactured by Rohm Semiconductor. The manufacturer part number is ES6U1T2R. The FET features of the product include schottky diode (isolated). It has a maximum Rds On and voltage of 260mohm @ 1.3a, 4.5v. It features p-channel 12v 1.3a (ta) 700mw (ta) surface mount 6-wemt. The product's input capacitance at maximum includes 290pf @ 6v. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 12v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 2.4nc @ 4.5v. 6-wemt is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-563, sot-666. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 1.3a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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