Rohm Semiconductor RSS070P05FU6TB

RSS070P05FU6TB Rohm Semiconductor
RSS070P05FU6TB
RSS070P05FU6TB
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
27mOhm @ 7A, 10V
Detailed Description:
P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
4100pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
47.6nC @ 5V
Drain to Source Voltage (Vdss):
45V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Supplier Device Package:
8-SOP
Packaging:
Cut Tape (CT)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RSS070P05FU6TB. It has a maximum Rds On and voltage of 27mohm @ 7a, 10v. It features p-channel 45v 7a (ta) 2w (ta) surface mount 8-sop. The product's input capacitance at maximum includes 4100pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 47.6nc @ 5v. The product has a 45v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. 8-sop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type p-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 2w (ta). The continuous current drain at 25°C is 7a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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Mult Dev EOL 29/Oct/2018(PCN Obsolescence/ EOL)
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RSS070P05(Datasheets)

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