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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK58E06N1,S1X. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 5.4mohm @ 29a, 10v. The typical Vgs (th) (max) of the product is 4v @ 500µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 110w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 3400 pf @ 30 v. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 46 nc @ 10 v. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 58a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk58e06, a base product number of the product. The product is designated with the ear99 code number.
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