Fairchild/ON Semiconductor IRFW630BTM_FP001

IRFW630BTM_FP001 Fairchild/ON Semiconductor
Fairchild/ON Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
400 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
200V
Standard Package:
800
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
3.13W (Ta), 72W (Tc)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Fairchild/ON Semiconductor
RoHs Compliant
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This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is IRFW630BTM_FP001. It has a maximum Rds On and voltage of 400 mohm @ 4.5a, 10v. The product's input capacitance at maximum includes 720pf @ 25v. The maximum gate charge and given voltages include 29nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 200v drain to source voltage. It is available in the standard package of 800. d²pak (to-263ab) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 3.13w (ta), 72w (tc). The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. The fairchild/on semiconductor's product offers user-desired applications.

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IRF(I,W)630B(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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TO263 31/Aug/2016(PCN Packaging)

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