Renesas Electronics America RJK6011DJE-00#Z0

Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
52Ohm @ 50mA, 10V
Detailed Description:
N-Channel 600V 100mA (Ta) 900mW (Ta) Through Hole TO-92MOD
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 25V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
3.7nC @ 10V
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Supplier Device Package:
TO-92MOD
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Power Dissipation (Max):
900mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK6011DJE-00#Z0. It has a maximum Rds On and voltage of 52ohm @ 50ma, 10v. It features n-channel 600v 100ma (ta) 900mw (ta) through hole to-92mod. The product's input capacitance at maximum includes 25pf @ 25v. The product is available in through hole configuration. The maximum gate charge and given voltages include 3.7nc @ 10v. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. to-92mod is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). The product carries maximum power dissipation 900mw (ta). The continuous current drain at 25°C is 100ma (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)
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RJK6011DJE-00#Z0(Datasheets)

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