Rohm Semiconductor RZF030P01TL

RZF030P01TL Rohm Semiconductor
RZF030P01TL
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 12V 3A (Ta) 800mW (Ta) Surface Mount TUMT3
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
3-SMD, Flat Leads
Base Part Number:
RZF030
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 4.5V
Rds On (Max) @ Id, Vgs:
39mOhm @ 3A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
1860pF @ 6V
Mounting Type:
Surface Mount
Supplier Device Package:
TUMT3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Customer Reference:
Power Dissipation (Max):
800mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RZF030P01TL. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 12v 3a (ta) 800mw (ta) surface mount tumt3. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, flat leads. Base Part Number: rzf030. The maximum gate charge and given voltages include 18nc @ 4.5v. It has a maximum Rds On and voltage of 39mohm @ 3a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The rohm semiconductor's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±10v. The product's input capacitance at maximum includes 1860pf @ 6v. The product is available in surface mount configuration. tumt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3a (ta). The product carries maximum power dissipation 800mw (ta). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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RZF030P01 ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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TUMT3 Constitution Material List(Environmental Information)
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RZF030P01(Datasheets)
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TUMT3 TL Taping Spec(Datasheets)
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Transistor, MOSFET Flammability(Other Related Documents)
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TUMT3 Inner Structure(Other Related Documents)
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TUMT3 MOS Reliability Test(Other Related Documents)
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TUMT3 Part Marking(Other Related Documents)

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