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This is manufactured by Renesas Electronics America. The manufacturer part number is 2SK4150TZ-E. It has a maximum Rds On and voltage of 5.7ohm @ 200ma, 4v. It features n-channel 250v 400ma (ta) 750mw (ta) through hole to-92. The product's input capacitance at maximum includes 80pf @ 25v. The product is available in through hole configuration. The maximum gate charge and given voltages include 3.7nc @ 4v. The product has a 250v drain to source voltage. The maximum Vgs rate is ±10v. to-92 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The product carries maximum power dissipation 750mw (ta). The continuous current drain at 25°C is 400ma (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
For more information please check the datasheets.
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