Category:
Power MOSFET
Dimensions:
5 x 6 x 1mm
Maximum Continuous Drain Current:
299 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
VSON-CLIP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
70 nC @ 4.5 V, 150 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
10700 pF @ 20 V
Length:
5mm
Pin Count:
8
Forward Transconductance:
180S
Typical Turn-Off Delay Time:
57 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
195 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
1.7 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs:
195 nC @ 10 V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD18509Q5BT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/4915638
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.1W (Ta), 195W (Tc)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
13900 pF @ 20 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON-CLIP (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD18509
ECCN:
EAR99
