ON Semiconductor CPH3350-TL-W

CPH3350-TL-W ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
11 Weeks
Base Part Number:
CPH335
Detailed Description:
P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount 3-CPH
Input Capacitance (Ciss) (Max) @ Vds:
375pF @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
83mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
4.6nC @ 4.5V
Supplier Device Package:
3-CPH
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is CPH3350-TL-W. It has typical 11 weeks of manufacturer standard lead time. Base Part Number: cph335. It features p-channel 20v 3a (ta) 1w (ta) surface mount 3-cph. The product's input capacitance at maximum includes 375pf @ 10v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 83mohm @ 1.5a, 4.5v. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 4.6nc @ 4.5v. 3-cph is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type p-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 1w (ta). The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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CPH3350(Datasheets)
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Raw Material Change 22/Jul/2015(PCN Design/Specification)

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