STMicroelectronics STB13N80K5

STB13N80K5 STMicroelectronics
STB13N80K5
STB13N80K5
STMicroelectronics

Product Information

Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
190 W
Series:
MDmesh K5, SuperMESH5
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
450 mΩ
Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB13
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
450mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
870pF @ 100V
Mounting Type:
Surface Mount
Series:
SuperMESH5™
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Customer Reference:
Power Dissipation (Max):
190W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STB13N80K5. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.35mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 29 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 190 w maximum power dissipation. The product mdmesh k5, supermesh5, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 450 mω maximum drain source resistance. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 800v 12a (tc) 190w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: stb13. The maximum gate charge and given voltages include 29nc @ 10v. It has a maximum Rds On and voltage of 450mohm @ 6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 870pf @ 100v. The product supermesh5™, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). The product carries maximum power dissipation 190w (tc). This product use mosfet (metal oxide) technology.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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ST(B,F,P,W)13N80K5(Datasheets)

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