IXYS IXFH22N65X2

IXFH22N65X2 IXYS
IXFH22N65X2
IXFH22N65X2
ET11849167
ET11849167
Single FETs, MOSFETs
Single FETs, MOSFETs
IXFH22N65X2 IXYSIXYS
IXFH22N65X2 IXYSIXYS
IXYS

Product Information

Category:
Power MOSFET
Dimensions:
16.24 x 21.45 x 5.3mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
21.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2190 pF @ 25 V
Length:
16.24mm
Pin Count:
3
Forward Transconductance:
14S
Typical Turn-Off Delay Time:
42 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
390 W
Series:
HiperFET, X2-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.3mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
145 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
160mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2310 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-247 (IXTH)
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH22
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by IXYS. The manufacturer part number is IXFH22N65X2. It is of power mosfet category . The given dimensions of the product include 16.24 x 21.45 x 5.3mm. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 21.45mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2190 pf @ 25 v . Its accurate length is 16.24mm. It contains 3 pins. The forward transconductance is 14s . Whereas, its typical turn-off delay time is about 42 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 390 w maximum power dissipation. The product hiperfet, x2-class, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.3mm. In addition, it has a typical 30 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 145 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 1.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 160mohm @ 11a, 10v. The maximum gate charge and given voltages include 38 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 390w (tc). The product's input capacitance at maximum includes 2310 pf @ 25 v. It has a long 47 weeks standard lead time. The product hiperfet™, ultra x2, is a highly preferred choice for users. to-247 (ixth) is the supplier device package value. The continuous current drain at 25°C is 22a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfh22, a base product number of the product. The product is designated with the ear99 code number.

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N-ch X2-Class HiPerFET Power MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
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IXF(A,H,P)22N65X2(Datasheets)

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FAQs

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Yes. We ship IXFH22N65X2 Internationally to many countries around the world.