Toshiba Semiconductor and Storage SSM3J133TU,LF

SSM3J133TU-LF Toshiba Semiconductor and Storage SSM3J133TU,LF
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
3-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
29.8mOhm @ 3A, 4.5V
title:
SSM3J133TU,LF
Vgs(th) (Max) @ Id:
1V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SSM3J133TU,LF Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
edacadModelUrl:
/en/models/5056496
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
840 pF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Gate Charge (Qg) (Max) @ Vgs:
12.8 nC @ 4.5 V
Supplier Device Package:
UFM
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J133
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J133TU,LF. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, flat leads. It has a maximum Rds On and voltage of 29.8mohm @ 3a, 4.5v. The typical Vgs (th) (max) of the product is 1v @ 1ma. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 840 pf @ 10 v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. The maximum gate charge and given voltages include 12.8 nc @ 4.5 v. ufm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 5.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j133, a base product number of the product. The product is designated with the ear99 code number.

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Marking Chg 08/Feb/2016(PCN Packaging)

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