Category:
Small Signal
Dimensions:
4.9 x 3.91 x 1.58mm
Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Width:
3.91mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
15 V
Maximum Gate Threshold Voltage:
1.5V
Maximum Drain Source Resistance:
90 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+125 °C
Typical Gate Charge @ Vgs:
11.25 nC @ 10 V
Channel Type:
P
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
791 mW
Maximum Gate Source Voltage:
-15 V, +2 V
Height:
1.58mm
Typical Turn-On Delay Time:
6.5 ns
Minimum Operating Temperature:
-40 °C
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11.25 nC @ 10 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
TPS1101D Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
edacadModelUrl:
/en/models/372163
Drain to Source Voltage (Vdss):
15 V
Vgs (Max):
+2V, -15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
791mW (Ta)
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPS1101
ECCN:
EAR99
