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The Diodes Incorporated DMN1019UFDE-7 is a robust surface mount N-Channel MOSFET designed for precision and efficiency in compact electronic applications. With a low drain-to-source voltage of 12V, a continuous drain current of 11A, and a power dissipation of 690mW, this Type E MOSFET delivers exceptional switching speed and thermal stability. Engineered in a space-saving package, it is crucial for UK-based designers and engineers seeking reliable, energy-efficient power management solutions for today’s advanced circuit designs.
The DMN1019UFDE-7 is trusted for its low on-resistance, fast switching, and enhanced thermal performance, making it perfect for applications requiring high efficiency in limited board space. It supports high-speed switching and low gate charge, reducing power losses and improving overall circuit performance. Designed with surface-mount convenience, it simplifies PCB layout while maintaining electrical reliability.
For more information please check the datasheets.
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