Diodes Incorporated DMN1019UFDE-7

Enrgtech Part No: ET11821602
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Manufacturer Part No:
DMN1019UFDE-7
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Manufacturer: Diodes Incorporated

Product Information

FET Feature:

HTSUS:

8541.21.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

6-PowerUDFN

Rds On (Max) @ Id, Vgs:

10mOhm @ 9.7A, 4.5V

title:

DMN1019UFDE-7

Vgs(th) (Max) @ Id:

800mV @ 250µA

REACH Status:

REACH Unaffected

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

1.2V, 4.5V

Drain to Source Voltage (Vdss):

12 V

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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN1019UFDE-7. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-powerudfn. It has a maximum Rds On and voltage of 10mohm @ 9.7a, 4.5v. The typical Vgs (th) (max) of the product is 800mv @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 4.5v. The product has a 12 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 690mw (ta). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 2425 pf @ 10 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 50.6 nc @ 8 v. u-dfn2020-6 (type e) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 11a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn1019, a base product number of the product. The product is designated with the ear99 code number.

Mult Dev Assembly Add 7/Dec/2018(PCN Assembly/Origin)

DMN1019UFDE(Datasheets)

Diodes Environmental Compliance Cert(Environmental Information)

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