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Toshiba Semiconductor and Storage SSM3J35CTC,L3F

SSM3J35CTC-L3F Toshiba Semiconductor and Storage SSM3J35CTC,L3F
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 100µA
Operating Temperature:
150°C (TJ)
Package / Case:
SC-101, SOT-883
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 150mA, 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SSM3J35CTC,L3F Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
edacadModelUrl:
/en/models/5403443
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
42 pF @ 10 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVII
Supplier Device Package:
CST3C
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J35
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J35CTC,L3F. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 100µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-101, sot-883. It has a maximum Rds On and voltage of 1.4ohm @ 150ma, 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 42 pf @ 10 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosvii, is a highly preferred choice for users. cst3c is the supplier device package value. The continuous current drain at 25°C is 250ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j35, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search SSM3J35CTC,L3F on website for other similar products.
We accept all major payment methods for all products including ET11813410. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with SSM3J35CTC,L3F directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage SSM3J35CTC,L3F. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage SSM3J35CTC,L3F.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11813410 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11813410.
Yes. We ship SSM3J35CTC,L3F Internationally to many countries around the world.
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