Infineon Technologies IPW60R190P6

IPW60R190P6 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 630µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
190mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
151W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1750 pF @ 100 V
Mounting Type:
Through Hole
Series:
CoolMOS™ P6
Supplier Device Package:
PG-TO247
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPW60R190P6. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 630µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 190mohm @ 7.6a, 10v. The maximum gate charge and given voltages include 37 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 151w (tc). The product's input capacitance at maximum includes 1750 pf @ 100 v. The product is available in through hole configuration. The product coolmos™ p6, is a highly preferred choice for users. pg-to247 is the supplier device package value. The continuous current drain at 25°C is 20.2a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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