Infineon Technologies BSZ165N04NS G

BSZ165N04NS-G Infineon Technologies BSZ165N04NS G
Infineon Technologies

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Vgs(th) (Max) @ Id:
4V @ 10µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Rds On (Max) @ Id, Vgs:
16.5 mOhm @ 20A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
840pF @ 20V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8.9A (Ta), 31A (Tc)
Power Dissipation (Max):
2.1W (Ta), 25W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
BSZ165N04NSGINCT
RoHs Compliant
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is BSZ165N04NS G. It has typical 12 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 4v @ 10µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. The maximum gate charge and given voltages include 10nc @ 10v. It has a maximum Rds On and voltage of 16.5 mohm @ 20a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The infineon technologies's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 840pf @ 20v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-tsdson-8 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8.9a (ta), 31a (tc). The product carries maximum power dissipation 2.1w (ta), 25w (tc). This product use mosfet (metal oxide) technology. Alternative Names include bsz165n04nsginct.

pdf icon
Multiple Changes 09/Jul/2014(PCN Other)
pdf icon
Part Number Guide(Other Related Documents)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search BSZ165N04NS G on website for other similar products.
We accept all major payment methods for all products including ET11806099. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with BSZ165N04NS G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BSZ165N04NS G. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BSZ165N04NS G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11806099 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11806099.
Yes. We ship BSZ165N04NS G Internationally to many countries around the world.