Nexperia USA Inc. PSMN1R4-30YLDX

PSMN1R4-30YLDX Nexperia USA Inc.
Nexperia USA Inc.

Product Information

Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 30V 100A (Tc) 166W (Tc) Surface Mount LFPAK56, Power-SO8
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Base Part Number:
PSMN1R4
Gate Charge (Qg) (Max) @ Vgs:
54.8nC @ 10V
Rds On (Max) @ Id, Vgs:
1.42mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Nexperia USA Inc.
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3840pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Customer Reference:
Power Dissipation (Max):
166W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN1R4-30YLDX. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 30v 100a (tc) 166w (tc) surface mount lfpak56, power-so8. The typical Vgs (th) (max) of the product is 2.2v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. Base Part Number: psmn1r4. The maximum gate charge and given voltages include 54.8nc @ 10v. It has a maximum Rds On and voltage of 1.42mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The nexperia usa inc.'s product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3840pf @ 15v. The product is available in surface mount configuration. lfpak56, power-so8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 100a (tc). The product carries maximum power dissipation 166w (tc). This product use mosfet (metal oxide) technology.

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Wafer Fab Site Transfer 04/Feb/2015(PCN Assembly/Origin)
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PSMN1R4-30YLD(Datasheets)
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Mult Devices Label 30/Sep/2018(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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FAQs

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You will get a confirmation email regarding your order of Nexperia USA Inc. PSMN1R4-30YLDX. You can also check on our website or by contacting our customer support team for further order details on Nexperia USA Inc. PSMN1R4-30YLDX.
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