Rohm Semiconductor RSH070N05TB1

RSH070N05TB1 Rohm Semiconductor
RSH070N05TB1
RSH070N05TB1
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
25mOhm @ 7A, 10V
Detailed Description:
N-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
45V
Vgs (Max):
20V
Gate Charge (Qg) (Max) @ Vgs:
16.8nC @ 5V
Supplier Device Package:
8-SOP
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RSH070N05TB1. It has a maximum Rds On and voltage of 25mohm @ 7a, 10v. It features n-channel 45v 7a (ta) 2w (ta) surface mount 8-sop. The product's input capacitance at maximum includes 1000pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 45v drain to source voltage. The maximum Vgs rate is 20v. The maximum gate charge and given voltages include 16.8nc @ 5v. 8-sop is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 2w (ta). The continuous current drain at 25°C is 7a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RSH070N05(Datasheets)

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