Rohm Semiconductor RU1J002YNTCL

RU1J002YNTCL Rohm Semiconductor
RU1J002YNTCL
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
20 Weeks
Base Part Number:
RU1J002
Detailed Description:
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount UMT3F
Input Capacitance (Ciss) (Max) @ Vds:
26pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
800mV @ 1mA
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±8V
Drive Voltage (Max Rds On, Min Rds On):
0.9V, 4.5V
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 200mA, 4.5V
Supplier Device Package:
UMT3F
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-85
Power Dissipation (Max):
150mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RU1J002YNTCL. It has typical 20 weeks of manufacturer standard lead time. Base Part Number: ru1j002. It features n-channel 50v 200ma (ta) 150mw (ta) surface mount umt3f. The product's input capacitance at maximum includes 26pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 800mv @ 1ma. The product has a 50v drain to source voltage. The maximum Vgs rate is ±8v. The drive voltage (maximum and minimum Rds On) of the product includes 0.9v, 4.5v. It has a maximum Rds On and voltage of 2.2ohm @ 200ma, 4.5v. umt3f is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-85. The product carries maximum power dissipation 150mw (ta). The continuous current drain at 25°C is 200ma (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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RU1J002YN ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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UMT3FM-HF Constitution Material List(Environmental Information)
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RU1J002YN(Datasheets)
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UMT3 T106 Taping Spec(Datasheets)
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UMT3 Part Marking(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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UMT3F Inner Structure(Other Related Documents)
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UMT3F MOS Reliability Test(Other Related Documents)

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FAQs

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