Rohm Semiconductor RQ6C050UNTR

RQ6C050UNTR Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 20V 5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
RQ6C050
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 4.5V
Rds On (Max) @ Id, Vgs:
30mOhm @ 5A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT6 (SC-95)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Customer Reference:
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ6C050UNTR. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 20v 5a (ta) 1.25w (ta) surface mount tsmt6 (sc-95). The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: rq6c050. The maximum gate charge and given voltages include 12nc @ 4.5v. It has a maximum Rds On and voltage of 30mohm @ 5a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The rohm semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The product's input capacitance at maximum includes 900pf @ 10v. The product is available in surface mount configuration. tsmt6 (sc-95) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5a (ta). The product carries maximum power dissipation 1.25w (ta). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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RQ6C050UN ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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TSMT6M-Cu-HF Constitution Material List(Environmental Information)
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TSMT Package Updates 24/Dec/2014(PCN Design/Specification)
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RQ6C050UN(Datasheets)
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TSMT6 TR Taping Spec(Datasheets)
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TSMT6 MOS Reliability Test(Other Related Documents)
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TSMT6MSCu Inner Structure(Other Related Documents)
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TSMT6 Part Marking(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)

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