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This is manufactured by Infineon Technologies. The manufacturer part number is IRF6794MTR1PBF. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.35v @ 100µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in directfet™ isometric mx. It has a maximum Rds On and voltage of 1.7mohm @ 32a, 10v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 25 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 2.8w (ta), 100w (tc). The product's input capacitance at maximum includes 4420 pf @ 13 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 47 nc @ 4.5 v. directfet™ mx is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 32a (ta), 200a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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