STMicroelectronics STB28N60DM2

STB28N60DM2 STMicroelectronics
STB28N60DM2
STB28N60DM2
ET11760516
ET11760516
Single FETs, MOSFETs
Single FETs, MOSFETs
STB28N60DM2 STMicroelectronicsSTMicroelectronics
STMicroelectronics

Product Information

Category:
Power MOSFET
Dimensions:
10.4 x 9.35 x 4.6mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
160 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
39 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
190 W
Series:
MDmesh DM2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
4.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
160mOhm @ 10.5A, 10V
title:
STB28N60DM2
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STB28N60DM2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5866615
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
170W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ DM2
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB28
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STB28N60DM2. It is of power mosfet category . The given dimensions of the product include 10.4 x 9.35 x 4.6mm. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.35mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 160 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 39 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 190 w maximum power dissipation. The product mdmesh dm2, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 4.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.6v . It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 160mohm @ 10.5a, 10v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 170w (tc). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 1500 pf @ 100 v. The product mdmesh™ dm2, is a highly preferred choice for users. The maximum gate charge and given voltages include 34 nc @ 10 v. to-263 (d2pak) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb28, a base product number of the product. The product is designated with the ear99 code number.

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STB28N60DM2, STP28N60DM2, STW28N60DM2, N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFETs(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer 15/Feb/2019(PCN Assembly/Origin)
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ST(B,P,W)28N60DM2(Datasheets)
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Carrier tape design improvement 05/Mar/2024(PCN Packaging)
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Mult Dev Inner Box Chg 9/Dec/2021(PCN Packaging)

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