Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PowerFLAT HV
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Length:
8mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3 W
Series:
MDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
0.95mm
Maximum Drain Source Resistance:
385 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
385mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STL13NM60N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2756466
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
3W (Ta), 90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
790 pF @ 50 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ II
Supplier Device Package:
PowerFlat™ (8x8) HV
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL13
ECCN:
EAR99
