Vishay Siliconix SI2323DS-T1-GE3

SI2323DS-T1-GE3 Vishay Siliconix
SI2323DS-T1-GE3
Vishay Siliconix

Product Information

Detailed Description:
P-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
SI2323
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 4.5V
Rds On (Max) @ Id, Vgs:
39mOhm @ 4.7A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1020pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.7A (Ta)
Customer Reference:
Power Dissipation (Max):
750mW (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI2323DS-T1-GE3. It features p-channel 20v 3.7a (ta) 750mw (ta) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: si2323. The maximum gate charge and given voltages include 19nc @ 4.5v. It has a maximum Rds On and voltage of 39mohm @ 4.7a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 1020pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sot-23-3 (to-236) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.7a (ta). The product carries maximum power dissipation 750mw (ta). This product use mosfet (metal oxide) technology.

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Si2323DS(Datasheets)

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