Dimensions:
1.46 x 1.46 x 0.22mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
1.46mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
24 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
EFCP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.8 nC @ 4.5 V
Channel Type:
N
Length:
1.46mm
Pin Count:
4
Typical Turn-Off Delay Time:
335 ns
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.22mm
Typical Turn-On Delay Time:
13 ns
Maximum Drain Source Resistance:
31 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
EFC4615
Detailed Description:
N-Channel 24V 6A (Ta) 1.6W (Ta) Surface Mount EFCP1515-4CC-037
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Drain to Source Voltage (Vdss):
24V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
31mOhm @ 3A, 4.5V
Supplier Device Package:
EFCP1515-4CC-037
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
4-XBGA, 4-FCBGA
Power Dissipation (Max):
1.6W (Ta)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
