Vishay Siliconix SIB456DK-T1-GE3

SIB456DK-T1-GE3 Vishay Siliconix
SIB456DK-T1-GE3
Vishay Siliconix

Product Information

Detailed Description:
N-Channel 100V 6.3A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-75-6L
Base Part Number:
SIB456
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 10V
Rds On (Max) @ Id, Vgs:
185mOhm @ 1.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
130pF @ 50V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SC-75-6L Single
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.3A (Tc)
Customer Reference:
Power Dissipation (Max):
2.4W (Ta), 13W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIB456DK-T1-GE3. It features n-channel 100v 6.3a (tc) 2.4w (ta), 13w (tc) surface mount powerpak® sc-75-6l single. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® sc-75-6l. Base Part Number: sib456. The maximum gate charge and given voltages include 5nc @ 10v. It has a maximum Rds On and voltage of 185mohm @ 1.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 130pf @ 50v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® sc-75-6l single is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.3a (tc). The product carries maximum power dissipation 2.4w (ta), 13w (tc). This product use mosfet (metal oxide) technology.

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SIB456DK(Datasheets)

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FAQs

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You will get a confirmation email regarding your order of Vishay Siliconix SIB456DK-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIB456DK-T1-GE3.
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Yes. We ship SIB456DK-T1-GE3 Internationally to many countries around the world.