Vishay Siliconix SIHG22N60E-GE3

SIHG22N60E-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
180mOhm @ 11A, 10V
title:
SIHG22N60E-GE3
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
Vendor Undefined
edacadModel:
SIHG22N60E-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4496297
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
227W (Tc)
standardLeadTime:
15 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1920 pF @ 100 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
86 nC @ 10 V
Supplier Device Package:
TO-247AC
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHG22
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHG22N60E-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 180mohm @ 11a, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 227w (tc). It has a long 15 weeks standard lead time. The product's input capacitance at maximum includes 1920 pf @ 100 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 86 nc @ 10 v. to-247ac is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sihg22, a base product number of the product. The product is designated with the ear99 code number.

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Mosfet Mfg Add 28/Sep/2020(PCN Assembly/Origin)
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SIHG22N60E(Datasheets)
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Packing Tube Design 19/Sep/2019(PCN Packaging)

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FAQs

Yes. You can also search SIHG22N60E-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11723667. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIHG22N60E-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIHG22N60E-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIHG22N60E-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11723667 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11723667.
Yes. We ship SIHG22N60E-GE3 Internationally to many countries around the world.