Toshiba Semiconductor and Storage TK3R1A04PL,S4X

TK3R1A04PL-S4X Toshiba Semiconductor and Storage TK3R1A04PL,S4X
TK3R1A04PL,S4X
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
175°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 30A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
63.4 nC @ 10 V
Vgs(th) (Max) @ Id:
2.4V @ 500µA
edacadModel:
TK3R1A04PL,S4X Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/6570929
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
36W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4670 pF @ 20 V
Mounting Type:
Through Hole
Series:
U-MOSIX-H
Supplier Device Package:
TO-220SIS
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
82A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK3R1A04
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK3R1A04PL,S4X. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 3.8mohm @ 30a, 4.5v. The maximum gate charge and given voltages include 63.4 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.4v @ 500µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 36w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 4670 pf @ 20 v. The product is available in through hole configuration. The product u-mosix-h, is a highly preferred choice for users. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 82a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk3r1a04, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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