Rohm Semiconductor RSM002N06T2L

RSM002N06T2L Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
7 Weeks
Rds On (Max) @ Id, Vgs:
2.4 Ohm @ 250mA, 10V
Detailed Description:
N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount VMT3
Input Capacitance (Ciss) (Max) @ Vds:
15pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.3V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Supplier Device Package:
VMT3
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Package / Case:
SOT-723
Power Dissipation (Max):
150mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RSM002N06T2L. It has typical 7 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 2.4 ohm @ 250ma, 10v. It features n-channel 60v 250ma (ta) 150mw (ta) surface mount vmt3. The product's input capacitance at maximum includes 15pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. vmt3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-723. The product carries maximum power dissipation 150mw (ta). The continuous current drain at 25°C is 250ma (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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VMT3 T2L Taping Spec(Datasheets)
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VMT3 MOS Reliability Test(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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VMT3 Part Marking(Other Related Documents)
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VMT3M Inner Structure(Other Related Documents)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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VMT3 Constitution Material List(Environmental Information)
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RSM002N06 ESD Data(Environmental Information)

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