IXYS IXFB150N65X2
Product Information
Maximum Continuous Drain Current:
150 A
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
PLUS264
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
355 nC @ 10 V nC
Channel Type:
N
Length:
20.26mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.56 kW
Series:
HiperFET
Maximum Gate Source Voltage:
±30 V
Height:
26.59mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
17 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Rds On (Max) @ Id, Vgs:
17mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs:
430 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
IXFB150N65X2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5629500
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1560W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
20400 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
PLUS264™
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFB150
ECCN:
EAR99
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FAQs
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You can order IXYS brand products with IXFB150N65X2 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFB150N65X2. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFB150N65X2.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11694139 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11694139.
Yes. We ship IXFB150N65X2 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFB150N65X2. While 150 a of maximum continuous drain current. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of plus264. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 355 nc @ 10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 20.26mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 1.56 kw maximum power dissipation. The product hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 26.59mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 17 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-264-3, to-264aa. It has a maximum Rds On and voltage of 17mohm @ 75a, 10v. The maximum gate charge and given voltages include 430 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1560w (tc). The product's input capacitance at maximum includes 20400 pf @ 25 v. It has a long 47 weeks standard lead time. The product hiperfet™, ultra x2, is a highly preferred choice for users. plus264™ is the supplier device package value. The continuous current drain at 25°C is 150a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfb150, a base product number of the product. The product is designated with the ear99 code number.
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