Nexperia USA Inc. BSH108,215

BSH108-215 Nexperia USA Inc. BSH108,215
Nexperia USA Inc.

Product Information

Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
BSH108
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Rds On (Max) @ Id, Vgs:
120mOhm @ 1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
Nexperia USA Inc.
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
190pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
TO-236AB
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.9A (Tc)
Customer Reference:
Power Dissipation (Max):
830mW (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Nexperia USA Inc.. The manufacturer part number is BSH108,215. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 30v 1.9a (tc) 830mw (tc) surface mount to-236ab. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: bsh108. The maximum gate charge and given voltages include 10nc @ 10v. It has a maximum Rds On and voltage of 120mohm @ 1a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The nexperia usa inc.'s product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 190pf @ 10v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. to-236ab is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.9a (tc). The product carries maximum power dissipation 830mw (tc). This product use mosfet (metal oxide) technology.

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BSH108(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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FAQs

Yes. You can also search BSH108,215 on website for other similar products.
We accept all major payment methods for all products including ET11688119. Please check your shopping cart at the time of order.
You can order Nexperia USA Inc. brand products with BSH108,215 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Nexperia USA Inc. BSH108,215. You can also check on our website or by contacting our customer support team for further order details on Nexperia USA Inc. BSH108,215.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11688119 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Nexperia USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET11688119.
Yes. We ship BSH108,215 Internationally to many countries around the world.