Rohm Semiconductor RHU002N06T106

RHU002N06T106 Rohm Semiconductor
RHU002N06T106
Rohm Semiconductor

Product Information

Base Part Number:
RHU002
Detailed Description:
N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3
Input Capacitance (Ciss) (Max) @ Vds:
15pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
2.4Ohm @ 200mA, 10V
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
4.4nC @ 10V
Supplier Device Package:
UMT3
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-70, SOT-323
Power Dissipation (Max):
200mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RHU002N06T106. Base Part Number: rhu002. It features n-channel 60v 200ma (ta) 200mw (ta) surface mount umt3. The product's input capacitance at maximum includes 15pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 2.4ohm @ 200ma, 10v. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 4.4nc @ 10v. umt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-70, sot-323. The product carries maximum power dissipation 200mw (ta). The continuous current drain at 25°C is 200ma (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RHU002N06 Datasheet(Datasheets)

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