Texas Instruments CSD25211W1015

CSD25211W1015 Texas Instruments
Texas Instruments

Product Information

Manufacturer Standard Lead Time:
35 Weeks
Detailed Description:
P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA, DSBGA
Base Part Number:
CSD25211
Gate Charge (Qg) (Max) @ Vgs:
4.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
33mOhm @ 1.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
-6V
Input Capacitance (Ciss) (Max) @ Vds:
570pF @ 10V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-DSBGA (1x1.5)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Customer Reference:
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Texas Instruments. The manufacturer part number is CSD25211W1015. It has typical 35 weeks of manufacturer standard lead time. It features p-channel 20v 3.2a (ta) 1w (ta) surface mount 6-dsbga (1x1.5). The typical Vgs (th) (max) of the product is 1.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufbga, dsbga. Base Part Number: csd25211. The maximum gate charge and given voltages include 4.1nc @ 4.5v. It has a maximum Rds On and voltage of 33mohm @ 1.5a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The texas instruments's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is -6v. The product's input capacitance at maximum includes 570pf @ 10v. The product is available in surface mount configuration. The product nexfet™, is a highly preferred choice for users. 6-dsbga (1x1.5) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.2a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology.

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DSBGA/Usip 14/Sep/2016(PCN Design/Specification)
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DSBGA/uSIP 22/Jun/2016(PCN Design/Specification)
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DSBGA-6L Carrier Tape Change 28/Oct/2013(PCN Packaging)
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Carrier Tape 28/Aug/2018(PCN Packaging)

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