Texas Instruments CSD19535KTTT
Product Information
Maximum Continuous Drain Current:
200 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
75 nC @ 0 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
4.1 mΩ
Manufacturer Standard Lead Time:
6 Weeks
Detailed Description:
N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
Vgs(th) (Max) @ Id:
3.4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Base Part Number:
CSD19535
Gate Charge (Qg) (Max) @ Vgs:
98nC @ 10V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7930pF @ 50V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
DDPAK/TO-263-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Customer Reference:
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Texas Instruments. The manufacturer part number is CSD19535KTTT. While 200 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 75 nc @ 0 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 300 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 4.1 mω maximum drain source resistance. It has typical 6 weeks of manufacturer standard lead time. It features n-channel 100v 200a (ta) 300w (tc) surface mount ddpak/to-263-3. The typical Vgs (th) (max) of the product is 3.4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-4, d²pak (3 leads + tab), to-263aa. Base Part Number: csd19535. The maximum gate charge and given voltages include 98nc @ 10v. It has a maximum Rds On and voltage of 3.4mohm @ 100a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The texas instruments's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 7930pf @ 50v. The product nexfet™, is a highly preferred choice for users. ddpak/to-263-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 200a (ta). The product carries maximum power dissipation 300w (tc). This product use mosfet (metal oxide) technology.
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