Maximum Continuous Drain Current:
200 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
75 nC @ 0 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
4.1 mΩ
Manufacturer Standard Lead Time:
6 Weeks
Detailed Description:
N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
Vgs(th) (Max) @ Id:
3.4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Base Part Number:
CSD19535
Gate Charge (Qg) (Max) @ Vgs:
98nC @ 10V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7930pF @ 50V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
DDPAK/TO-263-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Customer Reference:
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
