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Vishay Siliconix SIHB21N60EF-GE3

SIHB21N60EF-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
176mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
84 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
227W (Tc)
standardLeadTime:
23 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2030 pF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHB21
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHB21N60EF-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 176mohm @ 11a, 10v. The maximum gate charge and given voltages include 84 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 227w (tc). It has a long 23 weeks standard lead time. The product's input capacitance at maximum includes 2030 pf @ 100 v. The product is available in surface mount configuration. to-263 (d2pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sihb21, a base product number of the product. The product is designated with the ear99 code number.

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Additional Assembly Site 21/Oct/2016(PCN Assembly/Origin)
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SIHB21N60EF(Datasheets)

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FAQs

Yes. You can also search SIHB21N60EF-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11666576. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIHB21N60EF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIHB21N60EF-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIHB21N60EF-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11666576 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11666576.
Yes. We ship SIHB21N60EF-GE3 Internationally to many countries around the world.
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