Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
3.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
VSCONP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.3 nC @ 4.5 V
Channel Type:
N
Length:
3.5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.2 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
14.2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
10.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs(th) (Max) @ Id:
1.9V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD17579Q3AT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5022210
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 29W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
998 pF @ 15 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17579
ECCN:
EAR99
