Renesas Electronics America UPA2815T1S-E2-AT

Renesas Electronics America

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Rds On (Max) @ Id, Vgs:
11mOhm @ 21A, 10V
Detailed Description:
P-Channel 30V 21A (Tc) 1.5W (Ta) Surface Mount 8-HWSON (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds:
1760pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
47nC @ 10V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Supplier Device Package:
8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-PowerWDFN
Power Dissipation (Max):
1.5W (Ta)
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is UPA2815T1S-E2-AT. It has typical 16 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 11mohm @ 21a, 10v. It features p-channel 30v 21a (tc) 1.5w (ta) surface mount 8-hwson (3.3x3.3). The product's input capacitance at maximum includes 1760pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 47nc @ 10v. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. 8-hwson (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-powerwdfn. The product carries maximum power dissipation 1.5w (ta). The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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uPA2815T1S-E2-AT(Datasheets)

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