Category:
Power MOSFET
Dimensions:
10.53 x 4.83 x 15.75mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
GaN
Width:
4.83mm
Transistor Configuration:
Cascode
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
350 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.2 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
760 pF @ 400 V
Length:
10.53mm
Pin Count:
3
Typical Turn-Off Delay Time:
9.7 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
65 W
Maximum Gate Source Voltage:
-18 V, +18 V
Height:
15.75mm
Typical Turn-On Delay Time:
6.2 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2.1V
Base Part Number:
NTP8G2
Detailed Description:
N-Channel 600V 9A (Tc) 65W (Tc) Through Hole TO-220
Input Capacitance (Ciss) (Max) @ Vds:
760pF @ 400V
Drive Voltage (Max Rds On, Min Rds On):
8V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2.6V @ 500µA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±18V
Gate Charge (Qg) (Max) @ Vgs:
9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs:
350mOhm @ 5.5A, 8V
Supplier Device Package:
TO-220
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
65W (Tc)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
GaNFET (Gallium Nitride)
Manufacturer:
ON Semiconductor
