Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
±20 V
Height:
0.9mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
350 mΩ
Package Type:
SC-59
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
1.8 A
Forward Diode Voltage:
1.2V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
CPH3351
Detailed Description:
P-Channel 60V 1.8A (Ta) 1W (Ta) Surface Mount 3-CPH
Input Capacitance (Ciss) (Max) @ Vds:
262pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
Rds On (Max) @ Id, Vgs:
250mOhm @ 1A, 10V
Supplier Device Package:
3-CPH
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
