Vishay Siliconix SI3447CDV-T1-GE3

SI3447CDV-T1-GE3 Vishay Siliconix
SI3447CDV-T1-GE3
Vishay Siliconix

Product Information

Detailed Description:
P-Channel 12V 7.8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
SI3447
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 8V
Rds On (Max) @ Id, Vgs:
36mOhm @ 6.3A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
910pF @ 6V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.8A (Tc)
Customer Reference:
Power Dissipation (Max):
2W (Ta), 3W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SI3447CDV-T1-GE3. It features p-channel 12v 7.8a (tc) 2w (ta), 3w (tc) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: si3447. The maximum gate charge and given voltages include 30nc @ 8v. It has a maximum Rds On and voltage of 36mohm @ 6.3a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 910pf @ 6v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7.8a (tc). The product carries maximum power dissipation 2w (ta), 3w (tc). This product use mosfet (metal oxide) technology.

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Multiple Devices 14/Mar/2018(PCN Obsolescence/ EOL)
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SI3447CDV(Datasheets)

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