Diodes Incorporated DMN2600UFB-7

DMN2600UFB-7 Diodes Incorporated
Diodes Incorporated

Product Information

Manufacturer Standard Lead Time:
32 Weeks
Detailed Description:
N-Channel 25V 1.3A (Ta) 540mW (Ta) Surface Mount 3-X1DFN1006
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-UFDFN
Base Part Number:
DMN2600
Gate Charge (Qg) (Max) @ Vgs:
0.85nC @ 4.5V
Rds On (Max) @ Id, Vgs:
350mOhm @ 200mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
70.13pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
3-X1DFN1006
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Customer Reference:
Power Dissipation (Max):
540mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Diodes Incorporated. The manufacturer part number is DMN2600UFB-7. It has typical 32 weeks of manufacturer standard lead time. It features n-channel 25v 1.3a (ta) 540mw (ta) surface mount 3-x1dfn1006. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-ufdfn. Base Part Number: dmn2600. The maximum gate charge and given voltages include 0.85nc @ 4.5v. It has a maximum Rds On and voltage of 350mohm @ 200ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The diodes incorporated's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 70.13pf @ 15v. The product is available in surface mount configuration. 3-x1dfn1006 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.3a (ta). The product carries maximum power dissipation 540mw (ta). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly/Test Sit Add 1/Mar/2018(PCN Assembly/Origin)
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DMN2600UFB(Datasheets)
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DFN1006-2,DFN1006-3 Part Marking Chg 27/Oct/2015(PCN Design/Specification)
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Diodes RoHS 3 Cert(Environmental Information)

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