Toshiba Semiconductor and Storage SSM3J114TU(TE85L)
Product Information
Base Part Number:
TC7MBL3253
Detailed Description:
P-Channel 20V 1.8A (Ta) 500mW (Ta) Surface Mount UFM
Input Capacitance (Ciss) (Max) @ Vds:
331pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 4V
Rds On (Max) @ Id, Vgs:
149mOhm @ 600mA, 4V
Supplier Device Package:
UFM
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
P-Channel
Customer Reference:
Package / Case:
3-SMD, Flat Lead
Power Dissipation (Max):
500mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J114TU(TE85L). Base Part Number: tc7mbl3253. It features p-channel 20v 1.8a (ta) 500mw (ta) surface mount ufm. The product's input capacitance at maximum includes 331pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 7.7nc @ 4v. It has a maximum Rds On and voltage of 149mohm @ 600ma, 4v. ufm is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type p-channel. Moreover, the product comes in 3-smd, flat lead. The product carries maximum power dissipation 500mw (ta). The continuous current drain at 25°C is 1.8a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.
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