Infineon Technologies IPD12CN10NGATMA1

IPD12CN10NGATMA1 Infineon Technologies
Infineon Technologies

Product Information

Manufacturer Standard Lead Time:
39 Weeks
Detailed Description:
N-Channel 100V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Vgs(th) (Max) @ Id:
4V @ 83µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
65nC @ 10V
Rds On (Max) @ Id, Vgs:
12.4mOhm @ 67A, 10V
FET Type:
N-Channel
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4320pF @ 50V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
67A (Tc)
Customer Reference:
Power Dissipation (Max):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Infineon Technologies. The manufacturer part number is IPD12CN10NGATMA1. It has typical 39 weeks of manufacturer standard lead time. It features n-channel 100v 67a (tc) 125w (tc) surface mount pg-to252-3. The typical Vgs (th) (max) of the product is 4v @ 83µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 65nc @ 10v. It has a maximum Rds On and voltage of 12.4mohm @ 67a, 10v. It carries FET type n-channel. The infineon technologies's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4320pf @ 50v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-to252-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 67a (tc). The product carries maximum power dissipation 125w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Pkg Box Chg 3/Jan/2018(PCN Packaging)
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Part Number Guide(Other Related Documents)

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FAQs

Yes. You can also search IPD12CN10NGATMA1 on website for other similar products.
We accept all major payment methods for all products including ET11606807. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IPD12CN10NGATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IPD12CN10NGATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IPD12CN10NGATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11606807 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11606807.
Yes. We ship IPD12CN10NGATMA1 Internationally to many countries around the world.